RF Burnout Power of SIS Mixers Abstract
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ALMA Memo # 576
RF Burnout Power of SIS Mixers
A.R. Kerr
2008-02-27
The RF burnout power of Nb/Al-AlOx/Nb SIS mixers is estimated from measured DC burnout data. It is assumed that an SIS junction suffers permanent damage when it reaches a critical temperature which is the same for all junctions of that material type. The junction temperature depends on the power (RF or DC) dissipated in the junction and the thermal resistance between the junction and thermal ground. The burnout powers of some SIS receivers currently in use at millimeter-wave observatories are estimated .
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